Comparison of the H3TRB Performance of Silicon and Silicon Carbide Power Modules
نویسندگان
چکیده
In this work, the H3TRB performance of power modules with SiC MOSFET chips is investigated and compared to their silicon counterparts similar electrical ratings. For purpose, MOSFETs IGBT are packaged in same housing packaging technology an test performed on both types devices. The results show that while exhibit excellent performance, had a significantly longer time failure but also wider distribution. Hence, investigations presented paper confirm properly designed devices feature equal or even better ruggedness against electro-chemical stress than standard devics equally suitable for applications, which require operation harsh environments.
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ژورنال
عنوان ژورنال: Materials Science Forum
سال: 2022
ISSN: ['1422-6375', '0250-9776', '0255-5476', '1662-9752', '1662-9760']
DOI: https://doi.org/10.4028/p-7j50kd